Structure and Chemical Composition of a Surface of Carbide of Silicon after a Microscratching of Titanium

V.A. Nosenko, S.V. Nosenko, A.V. Avilov, V.I. Bakhmat

Abstract


With use of a two-beam electron microscope of Versa 3D the status of a site of wear of carbide of silicon in case of a microscratching of VT1-00 titanium alloy is probed by a crystal from carbide of silicon green on cutting speeds of 35 m/s and a chemical composition in surface nanolayers. It is shown that in case of a microscratching of titanium the peak of a crystal is almost completely covered with metal. By a micro x-ray spectral analysis method in case of different acceleration voltage of electrons of excitation of U the chemical composition in nanolayers of a surface of carbide of silicon and the stuck metal is probed. On visually pure sections of a site of wear of carbide of silicon in case of U=5 kV presence of atoms of titanium in number of about 3% atom is revealed. In the titanium who stuck to a silicon carbide surface some increase the content of silicon is watched. Is present at nanolayers of carbide of silicon excess atoms of carbon. With increase U concentration of atoms of carbon decreases, and atoms of silicon – increases. In case of acceleration voltage of 20 kV atomic concentration of silicon and carbon can be read the identical. The content of atoms of titanium most intensively decreases in the range from 5 to 15 kV where concentration of titanium decreases with 2,9 to 0,6% atom. Electronic photos of the researched objects, the received in case of different increase and graphic materials are provided.

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References


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DOI: http://dx.doi.org/10.24892/RIJIE/20140403

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